From October 30 to November 1, 2023, the Electronica South China was held  at the Shenzhen International Convention and Exhibition Center (Bao'an New Venue). This exhibition gathers over 1100 well-known domestic and foreign enterprises, with the theme of "integrated innovation", focusing on popular technology applications including 5G, IoT, automotive, carbon neutrality, third-generation semiconductors, industrial automation, machine vision, wearable devices, consumer electronics, smart homes, and more.

As China's leading supplier of third-generation silicon carbide power semiconductor devices, APS was invited to participate in the event and showcased a series of innovative achievements on the booth, including third-generation SiC MOSFET, SiC diodes, new energy vehicles, DC charging module, and photovoltaic energy storage.

As an invited media for this exhibition, “Future Semiconductor” was fortunate to interview Mr. Chau Wing Chon,

 the founder and CEO of APS, to share the development prospects and market trends of silicon carbide devices.

Q: Please introduce APS

Chau Wing Chon: APS is a leading supplier of third-generation silicon carbide power semiconductor devices in China, and one of the earliest companies in China to engage in research and development of silicon carbide devices. We are the first to successfully use 6-inch silicon carbide (SiC) technology to achieve technological breakthroughs in this field in China. The headquarters is located in Shanghai and has subsidiaries in Shenzhen, Hong Kong, Beijing.

The company adopts the CIDM strategy to provide silicon carbide products for popular fields such as new energy, photovoltaic energy storage, DC charging module, etc., and provides solutions for carbon neutrality.

Q: Please introduce the company's silicon carbide device product line, including main specifications and application areas

Chau Wing Chon: The company's main products are SiC MOSFET and SiC diodes. As of the third quarter of 2023, APS cumulative shipments of silicon carbide devices exceeded 20.5 million pieces.

SiC MOSFET covers a variety of mainstream specifications in the market, with a voltage rating ranging from 650V to 1700V and a on-resistance ranging from 11 to 800mΩ, to meet the needs of different voltage applications .In 2021, APS took the lead in achieving commercial production of SiC MOSFET, reducing its dependence on imported silicon carbide and gradually promoting the process of domestic substitution .Gen 2++650V 30/45/60mΩ and Gen2+ 1200V 35/70/160mΩ MOSFET have passed the automotive AEC-Q101 reliability verification and the 960V high-voltage H3TRB stringent test.In 2023, the third generation of SiC MOSFET was successfully launched, further enriching the SiC MOSFET product line. Including 1200V 14/18/30/40/80 mΩ, using TO247-4 and TO263-7 packaging forms.

SiC diode models cover more than 70 mainstream specifications on the market, using APS's proprietary Buffer JBS structure, substrate thinning and low Schottky contact technology, and also incorporating industry-leading packaging. Since 2019, APS has become one of the first companies in China to mass produce and ship 1200V SiC devices, and its product performance and quality have reached the level of international giants.

The company's main 1200V MOSFET has been shipped in large quantities, including DC charging module and other new energy vehicles, with zero failure rate and a steady upward trend in shipments.

Currently, APS silicon carbide products are mainly used in DC charging module and photovoltaic energy storage fields, and have been supplied in large quantities to leading companies in these fields. The cooperation between automotive-grade MOSFET and key customers in new energy vehicles has achieved significant breakthroughs, and the depth and breadth of business cooperation intentions will continue to expand in the next 2-3 years.

Q ：What are the core competitiveness of the company at present? Compared with domestic or international competitors, what advantages do APS have?

Chau Wing Chon: The semiconductor industry is spur with long accumulation, and only the simultaneous accumulation of technology, talent, products, and markets can ensure the competitiveness of the company's long-term development.

In terms of talent, APS has gathered a top-notch talent team in the field of power devices in China. Several core leaders have served as senior executives in companies such as SMIC and Silan Microelectronics. The core R&D and marketing teams come from leading international semiconductor companies such as STMicroelectronics, Infineon, and ON Semiconductor. They have superb professional skills and rich experience in FAB operations, wafer mass production, and manufacturing, and have resources from the entire industrial chain from design to manufacturing.

In addition, APS has conducted research and development in the field of silicon carbide devices for many years and has accumulated rich technology and experience. It has obtained more than 40 independently developed patents, including more than 10 core technology patents, and more than 50 patents are under application .In the field of domestic power devices, the technology accumulation and research and development capabilities are in a leading position . Moreover, domestic enterprises have made great progress in the manufacturing process and production capacity of silicon carbide devices, which can meet market demand.

Relying on the dual-wheel drive of design capabilities and process capabilities, APS has created multiple pioneers in China:

Take the lead in producing 6-inch silicon carbide devices from silicon wafer foundries; Taking the lead in producing and shipping a large number of 1200V silicon carbide devices, greatly reducing import dependence; Taking the lead in adopting Thinning Technology in the production of silicon carbide diodes; The first JBS architecture with independent patents; We have achieved automotive grade products and comply with the AEC-Q101 standard; It is one of the few companies that has achieved mass production of silicon carbide MOSFETs.

Compared with international competitors, domestic silicon carbide companies have certain advantages in the local market. The demand for silicon carbide devices in the domestic market is growing, and APS has high market adaptability and flexibility, which enables it to better understand and respond to the needs of local customers in a timely manner. In addition, it also has certain advantages in cost control, and can provide more competitive products and prices.

Q ：How does the company maintain the relationship between upstream and downstream supply chains by adopting CIDM

Chau Wing Chon: For companies adopting the CIDM model, maintaining the relationship between upstream and downstream supply chains is very important.

In terms of epitaxy and substrate, we have chosen to establish a stable and close partnership with foreign substrate raw material suppliers and CEC Compound to ensure the stable and efficient operation of the supply chain .In terms of chip production, we have partnered with wafer foundry GTA  Semiconductor, which is the earliest foundry in China to mass produce 6-inch silicon carbide devices. Through their manufacturing capabilities and resources, we can achieve product production and high-quality delivery.

Q: Does the company carry out research projects or technological cooperation with partners? If so, what do you think of the significance of such cooperation in promoting the development of the silicon carbide device industry?

Chau Wing Chon: APS has been closely cooperating with Peking University, Hong Kong University, Hong Kong University of Science and Technology and other institutions on various research projects and technical cooperation in silicon carbide materials and devices. In 2022, it also joined the "Microelectronics Technology Alliance" led by the Hong Kong Academy of Applied Sciences, and jointly developed silicon carbide power modules and silicon carbide packaging technology with multiple well-known universities in Hong Kong.

Through technical exchanges and cooperation with these universities, we can jointly solve technical problems, accelerate technological innovation and product development .In addition, we can strengthen resource integration and sharing, jointly cultivate microelectronic innovation talents, jointly develop integrated circuit product processes with Chinese characteristics, and improve the overall competitiveness of our semiconductor industry.

Q: The advantages of silicon carbide technology are well known. What are the bottlenecks and obstacles that need to be overcome for a strong rise in the future?

Chau Wing Chon: The silicon carbide industry chain has a huge market space, but it also has high industry barriers. Although silicon carbide technology has many advantages over silicon, it still faces some challenges in development, such as manufacturing processes and costs.

Firstly, the reliability of silicon carbide devices still needs to be improved, with the most critical factors being the drift of device threshold voltage (Vth) and the reliability of gate oxide. These are also core parameters for evaluating the technical reliability level of various silicon carbide MOSFET products. Secondly, the price of silicon carbide devices is approximately 2-3 times that of silicon devices, and the high production cost limits their large-scale application.

The methods to reduce costs are: first, increasing the wafer size from 6 inches to 8 inches, which can produce more usable chips with a similar cost of tape-out, and reduce the cost of each chip; second, reducing the chip area through advanced technology or design; third, improving the yield through process optimization.

Due to the shortage of silicon carbide materials, the market demand exceeds supply, the supply chain verification cycle is also long, and the window period for industrial introduction is limited. However, with the expansion of the later market, capital investment, and technology optimization, these problems can be overcome one by one.

Q: As one of the earliest companies engaged in the research and development of silicon carbide devices in China, please talk about the development and market prospects of silicon carbide devices.

Chau Wing Chon: As the core of the third generation of semiconductor materials, silicon carbide is a strategic and fundamental industry that supports economic and social development and safeguards national security. It has been included in the "14th Five-Year Plan" for industrial technology innovation-related development planning. The country has successively issued policies such as the "Guiding Catalogue for the First Batch of Application Demonstration of Key New Materials (2019 Edition)" and the "2020 Annual Project of Key Special Projects for 'Strategic Advanced Electronic Materials' to support its development.

The "Made in China 2025" plan clearly proposes to vigorously develop the third-generation semiconductor industry, and silicon carbide devices are applied in various fields of "new infrastructure" such as 5G infrastructure, new energy vehicle charging piles, ultra-high voltage and rail transportation. In addition, China is also the world's largest new energy vehicle market. As the penetration rate of domestic pure electric vehicles and hybrid electric vehicles continues to increase, the demand for silicon carbide MOSFETs in the domestic market is also increasing, and the silicon carbide industry is facing huge development opportunities.

Although China's silicon carbide technology started late, it has caught up with the foreign research and development level in just a few years. As the core link of the industrial chain, domestic silicon carbide substrate companies have developed rapidly. Currently, the main size of silicon carbide substrates worldwide is 6 inches, while domestic leading companies are also striving towards the development direction of 8-inch production lines. Compared with foreign manufacturers, the gap is gradually narrowing. In the field of silicon carbide diodes, domestic manufacturers have matured in technology and reached the level of foreign manufacturers. In terms of silicon carbide MOSFET, our silicon carbide MOSFET also achieves a voltage range of 650V-1700V. Although there are some gaps in the on-resistance of domestic silicon carbide MOSFET compared with foreign manufacturers, we are catching up quickly. Domestic manufacturers are actively laying out their layouts, and it is expected that in the future, with the deep collaboration and cooperation between the upstream and downstream of the industrial chain, the domestic silicon carbide devices will gradually replace all application fields.

In 2015,APS began to develop 6-inch silicon carbide products and accumulated years of experience in this industry. Now, it has finally ushered in the vigorous development of the domestic silicon carbide market.

Q: Future development plan and goal of the company

Chau Wing Chon: At present, we have supplied our products in batches to leading customers in the fields of photovoltaic energy storage and DC charging module, laying a stable foundation for further development.

The next step is to strengthen the research and development of new-generation silicon carbide MOSFETs and actively lay out the new energy vehicle field. Our automotive-grade MOSFET products have been sent to multiple customers for verification, and preliminary cooperation has been reached with leading enterprises in the new energy vehicle field. At the same time, we are also actively expanding other customers in this field and striving to win more market share.

Chau Wing Chon

APS CEO

Mr. Chau Wing Chon has nearly 30 years of rich experience and profound knowledge in the semiconductor field. He has served as an executive at international well-known semiconductor companies such as SMIC, Micron Technology, and Texas Instruments. He has extensive experience in FAB operations, wafer mass production, process integration, technology markets, and has a deep understanding of the semiconductor supply chain.

Chau Wing Chon is committed to pioneering innovation and continuous improvement, leading the industry's top technical team to provide excellent silicon carbide products and provide solutions for carbon neutrality. Under his leadership, APS pioneered the successful use of 6-inch silicon carbide (SiC) technology in 2015, achieving technological breakthroughs in this field in China. Various SiC diodes and SiC MOSFETs were subsequently launched and successfully commercialized for mass shipment. APS will continue to work hard to bring more innovations and breakthroughs to the industry.