Our strategy is to power the China's green energy industry, by providing the world-class SiC products manufactured by our proprietary SiC process. By using the fabless wafer foundry model, we can take advantage of low-cost wafer fab and the best processing tools to achieve volume SiC production without high capital investments.
Our SiC MOSFETs power modules provide system designers with new opportunities to achieve unprecedented levels of efficiency and power density in inverter application. In addition, silicon carbide (SiC) meets application requirements through various topologies available for Rds(on).
Our 1200V SiC MOSFETs modules offer various configurations such as 3-level, dual-level, four-group, six-group or boost type, which can achieve excellent gate oxide reliability through first-class trench design, with first-class switching and conduction losses .