Silicon Carbide MOSFET

SiC MOSFET

The SiC MOSFET independently developed by APS has the advantages of high switching frequency, low on-state resistance, excellent high-temperature performance and high-voltage resistance, and has great potential to replace the existing IGBT and super-junction MOSFET. Once used in designing higher frequency power supply, it can reduce the volume of system energy storage devices, such as large inductors, large transformers and large capacitors, thus reducing the system cost. 

The second-generation planar MOSFET introduced by APS promotes the development trend of highly efficient and highly reliable photovoltaic wind power, new energy vehicles, uninterruptible power supply, server power supply and many other applications. Existing package types include TO247-3, TO247-4, etc. 

KNOWLEDGE CENTER
APS launch TOLL Package SiC MOSFET with excellent thermal performance

APS launch TOLL Package SiC MOSFET with excellent thermal performance

APS provides the most advanced TOLL package Mosfet with low Vgs which is very suitable for Server and USB PD charger app...

Angel Investment Forum in China Hi-Tech Fair 2020

Angel Investment Forum in China Hi-Tech Fair 2020

We are invited to present our most advanced technology in the Angel Investment Forum.

3rd generation semiconductor Symposium  2019

3rd generation semiconductor Symposium 2019

Alpha power presented Silicon Carbide Solution for EV charger and Server Power application.