The SiC MOSFET independently developed by APS has the advantages of high switching frequency, low on-state resistance, excellent high-temperature performance and high-voltage resistance, and has great potential to replace the existing IGBT and super-junction MOSFET. Once used in designing higher frequency power supply, it can reduce the volume of system energy storage devices, such as large inductors, large transformers and large capacitors, thus reducing the system cost. 

The second-generation planar MOSFET introduced by APS promotes the development trend of highly efficient and highly reliable photovoltaic wind power, new energy vehicles, uninterruptible power supply, server power supply and many other applications. Existing package types include TO247-3, TO247-4, etc.