Silicon Carbide MOSFET

SiC MOSFET

The SiC MOSFET independently developed by APS has the advantages of high switching frequency, low on-state resistance, excellent high-temperature performance and high-voltage resistance, and has great potential to replace the existing IGBT and super-junction MOSFET. Once used in designing higher frequency power supply, it can reduce the volume of system energy storage devices, such as large inductors, large transformers and large capacitors, thus reducing the system cost. 

The second-generation planar MOSFET introduced by APS promotes the development trend of highly efficient and highly reliable photovoltaic wind power, new energy vehicles, uninterruptible power supply, server power supply and many other applications. Existing package types include TO247-3, TO247-4, etc. 

KNOWLEDGE CENTER
APS was invited to participate in the 2021 Asia-Pacific Power Product and Technology Exhibition

APS was invited to participate in the 2021 Asia-Pacific Power Product and T...

APS was invited to participate in the 2021 Asia-Pacific Power Product and Technology Exhibition from...

APS invited to attend Electronica South China 2022, Munich

APS invited to attend Electronica South China 2022, Munich

On November 15-17, 2022, APS was invited to participate in Electronica South China 2022, Munich. In ...

Establish a Microelectronics Technology Consortium to promote the development of the regional ecosystem and lead the innovation frontier

Establish a Microelectronics Technology Consortium to promote the developme...

The Hong Kong Government is determined to develop high-tech industries, aiming to make Hong Kong int...

ASTRI, ASM Pacific Technology and Alpha Power Solutions Develop First ‘Made in Hong Kong’ Silicon Carbide Intelligent Power Module for Electric Vehicles

ASTRI, ASM Pacific Technology and Alpha Power Solutions Develop First ‘Made...

[Hong Kong, 21 APRIL 2022] The Hong Kong Applied Science and Technology Research Institute (ASTRI), ...