APS's independently developed silicon carbide MOSFET has the advantages of high switching frequency, low on-resistance, excellent performance under high temperatures, and high voltage resistance. It has great potential to replace existing IGBT and super junction MOSFET. Its application in higher frequency power supply design can reduce the size of system energy storage devices, such as large inductors, transformers, and large-capacity capacitors, thereby reducing system costs.

The second-generation planar structure MOSFET launched by APS promotes the expansion of photovoltaic wind power, new energy vehicles, uninterruptible power supplies, server power supplies and other applications towards the direction of being highly efficient and reliable. Existing package types include: TO247-3, TO247-4, etc.