Selection Guide

Selection Guide

Silicon carbide power devices have become the most viable candidate for the next generation of low-loss semiconductors due to their lower on-resistance and superior high-temperature, high-frequency and high-voltage performance compared to silicon. Silicon carbide devices also allow designers to use fewer components, further reducing design complexity.


APS is at the forefront of the development of silicon carbide devices and modules that provide greater energy savings in applications across many industries.

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Explanation: the cross-reference information provided by APS is based on our best comparative review of information released by other manufacturers at the time when we collected the information. We suggest that it is our customers' responsibility to thoroughly review our latest data sheets and product specifications, and confirm the equipment functions for specific applications. APS is not responsible for any incorrect or incomplete information, and may change the information at any time without prior notice.