Selection Guide

Selection Guide

Compared with silicon, silicon carbide power devices feature lower on-state resistance and superior high-temperature, high-frequency and high-voltage performance, so it has become the most feasible alternative for the next generation of low-loss semiconductors. Silicon carbide devices also allow designers to use fewer components, further reducing design complexity. 

At the forefront of the development of APS silicon carbide devices and modules, these devices and modules can provide higher energy-saving effects in many industries. 

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