SiC Characteristics


SiC Characteristics

Alpha Power Solutions (APS)  is the first 6 inches Silicon Carbide (SiC) Power device manufacturer in Greater China competing directly with international brand.  APS offering full series 650V-1200V SiC MOSFETs and 650V-1700V SiC diode.

Technology advances have pushed silicon semiconductor to approach its theoretical material limits; present Si-based power device cannot meet up with the ever-increasing demand of power device requirements for various industrial / commercial applications for power electronics. These include higher blocking voltages, switching frequencies, efficiency and reliability. Silicon carbide (SiC), also known as wide band-gap material, is perfect candidate to replace Si in these applications. 

Power devices fabricated using silicon carbide (SiC) technology can benefit from its superior properties. These properties enable the SiC device to operate at temperature >200 degree C, show 2x power density and 50% power losses compared to Si-based devices. The electronic system using SiC device always demonstrates smaller system size, lower system cost and more reliable in high temperature environment.

Silicon carbide (SiC) provides various advantages over Silicon and Gallium Arsenide in properties of band gap, breakdown electric field as well as thermal conductivity.