Silicon Carbide Products

Products

In terms of manufacturing silicon carbide Schottky diodes, MOSFET and power modules, our gate drive board is the out-of-the-box springboard for the best power energy conversion. These state-of-the-art components feature higher efficiency, higher switching frequency and smaller system size and weight in various applications. 

SiC Diodes

SiC Diodes

With over a decade of experience in the silicon carbide market, APS offers the widest portfolio of silicon carbide diodes. Our diode products adopt an MPS design (combining the best functions of Schottky and PiN diodes), which is more robust and reliable than the standard Schottky barrier diode. Pairing our SiC diode with SiC MOSFET can achieve a powerful combination of higher efficiency and lower component cost. 

SiC MOSFET

SiC MOSFET

SiC MOSFET can achieve higher switching frequency and reduce the size of components such as inductors, capacitors, filters and transformers. Our SiC MOSFET product can achieve lower switching loss and conduction loss with higher blocking voltage and avalanche capability. 

SiC Modules

SiC Modules

The 1200V/200A-300A all-SiC half-bridge module designed by APS has on-state resistance as low as 5mW, built-in silicon carbide Schottky diode with ideal reverse characteristics, and its switching property is almost independent of temperature, so it can operate reliability at the higher switching frequency. APS's all-SiC module is now entering the applications such as the electric vehicle motor driver, traction, solar inverter, wind energy inverter and UPS power supply.