In the manufacturing of SiC Schottky diodes, MOSFETs and power modules, our gate drive board is the best out-of-the-box springboard for optimal energy conversion. These state-of-the-art components offer higher efficiency, higher switching frequencies and reduced system size and weight in a wide range of applications.
With over a decade of experience in the silicon carbide market, APS offers the widest portfolio of silicon carbide diodes. Our diode products adopt an MPS design (combining the best functions of Schottky and PiN diodes), which is more robust and reliable than the standard Schottky barrier diode. Pairing our SiC diode with SiC MOSFET can achieve a powerful combination of higher efficiency and lower component cost.
SiC MOSFET can achieve higher switching frequency and reduce the size of components such as inductors, capacitors, filters and transformers. Our SiC MOSFET product can achieve lower switching loss and conduction loss with higher blocking voltage and avalanche capability.