At APS, we are committed to delivering products that can benchmark to the international quality and reliability performance to our customers. Today APS like most semiconductor MNCs are still referring to the following standards for our power device qualifications:

JESD47 Stress Test Driven Qualification of Integrated Circuits •AEC Q101 Failure Mechanism Based Stress Test Qualification for Discrete Semiconductors in Automotive Applications

In addition that, APS shall also refer to other emerging and appropriate standards and methodologies in order to keep our pace up-to-dated with the competing market players:


JEP148 Reliability Qualification of Semiconductor Devices Based on Physics of Failure Risk and Opportunity Assessment JESD94 Application Specific Qualification using Knowledge Based Test •JC-70 committee which is formed for WBG (GaN and SiC) test standardization taskforce


Introduction of reliability test standards


Qualification report 


APS leverages competitive advantages to support our reliability assurance program:

•Compliance to International Standards 

验证规范:完全按照国际行业标准,如JESD47及AEC-Q101制定验证计划;标准媲美国际大品牌 •Reliability Stress Test Capabilities 

验证能力:借助香港科学园和本地大学为主导的国际级可靠性和失效分析实验室,配合产品验证和分析需求 •Failure Analysis Capabilities 

失效分析: 严谨的失效分析报告及闭路反馈确保每个失效状态有效处理;相关导入DFMEA  •Data Driven 

数据导向:强调验证数据之统计分析,测试前后数据及Cpk 之变化,成因与改善行动之跟进行动;并不会满足於0/1准则 •Extended Reliability Assessment 

延伸寿命测试: 除了满足国际标准, 亦会追求延伸寿命测试以发现产品潜在的凡风险, 让产品变得更可靠耐用


Because of SiC’s superior intrinsic material properties over Si, the following performance can be demonstrated:

Longer life (due to sustaining higher electric field)

Higher temperature endurance

Ruggedness


Combining with appropriate packaging and material technologies, SiC devices can be demonstrated their superior reliability performance in some reliability tests, such as:


Reliability TestsSiC devicesSi devices

HTRB/HTGB

@ Tjmax 175°C or up to 200°C

@Tjmax 125°C or 150°C

TCT

@ -55°C to +175°C

@ -55°C to +150°C

Ruggedness(UIS)

Typ. 200-400mJ

Typ. <100mJ

IOL

ΔTj ≥ 125°C

ΔTj ≥ 100°C