The 1200V/200A-300A all-SiC half-bridge module designed by APS has on-state resistance as low as 5mW, built-in silicon carbide Schottky diode with ideal reverse characteristics, and its switching property is almost independent of temperature, so it can operate reliability at the higher switching frequency. APS's all-SiC module is now entering the applications such as the electric vehicle motor driver, traction, solar inverter, wind energy inverter and UPS power supply.