The 1200V/200A-300A all-SiC half-bridge module designed by APS has an on-state resistance as low as 5mW, a built-in silicon carbide Schottky diode with ideal reverse characteristics, and its switching property is almost independent of temperature, allowing it to operate reliably at higher switching frequencies. APS's all-SiC module is now entering applications such as electric vehicle motor drives, traction, solar inverters, wind energy inverters and UPS power supplies.